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GT60PR21 Silicon N-Channel IGBT

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Description

Discrete IGBTs Silicon N-Channel IGBT GT60PR21 GT60PR21 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Applications Note.

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Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ. ) (IC = 60 A) FWD trr = 0.60 µs (typ. ) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ. ) (IC = 60 A) (6

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Silicon N-Channel IGBT Toshiba
Toshiba GT60PR21-like datasheet