* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6
GT60PR21 Datasheet (219.40 KB)
GT60PR21
219.40 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT
GT60PR21
GT60PR21
1. Applications
* Dedicated to Voltage-Resonant Inverter Switching Applications
Note.
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