GT60J322 Datasheet (Toshiba Semiconductor)

GT60J322, Silicon N-Channel IGBT

GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms