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GT60J322 Silicon N-Channel IGBT

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Description

GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm *.

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Applications

* Unit: mm
* Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ. ) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Juncti

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GT60J322 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT60J322-like datasheet
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