Datasheet4U Logo Datasheet4U.com

GT60J322 Silicon N-Channel IGBT

📥 Download Datasheet  Datasheet Preview Page 1

Description

GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm *.

📥 Download Datasheet

Preview of GT60J322 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Unit: mm
* Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ. ) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Juncti

GT60J322 Distributors

📁 Related Datasheet

  • GT60J321 - Silicon N-Channel IGBT (Toshiba)
  • GT60J323H - Silicon N-Channel IGBT (Toshiba)
  • GT600HF65T9H - IGBT (NJSME)
  • GT605G - 6 Amp Glass Passivated Quick Connect Rectifier (TAITRON)
  • GT60M101 - Insulated Gate Bipolar Transistor (ETC)
  • GT60M322 - Silicon N-Channel IGBT (Toshiba)

📌 All Tags

Toshiba Semiconductor GT60J322-like datasheet