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GT60J322 Datasheet - Toshiba Semiconductor

GT60J322 Silicon N-Channel IGBT

GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms.

GT60J322-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT60J322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

275.49 KB

Description:

Silicon n-channel igbt.

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GT60J322 GT60J322 Silicon N-Channel IGBT Toshiba Semiconductor

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