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GT60M323 Datasheet - Toshiba

GT60M323 Silicon N-Channel IGBT

GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous .

GT60M323_Toshiba.pdf

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Datasheet Details

Part number:

GT60M323

Manufacturer:

Toshiba ↗

File Size:

192.62 KB

Description:

Silicon n-channel igbt.

GT60M323 Distributor

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GT60M323 GT60M323 Silicon N-Channel IGBT Toshiba