Part number:
GT60M323
Manufacturer:
File Size:
192.62 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Datasheet Details
Part number:
GT60M323
Manufacturer:
File Size:
192.62 KB
Description:
Silicon n-channel igbt.
GT60M323, Silicon N-Channel IGBT
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous
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