Part number:
GT60N323
Manufacturer:
File Size:
138.03 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Datasheet Details
Part number:
GT60N323
Manufacturer:
File Size:
138.03 KB
Description:
Silicon n-channel igbt.
GT60N323, Silicon N-Channel IGBT
GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm diode included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode : trr = 0.35 μs (max.) (di/dt = 200 A/μs) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1 m
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