GT60N322 Datasheet - Toshiba Semiconductor

GT60N322 Silicon N-Channel IGBT

www.DataSheet4U.com GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Ga.

GT60N322_ToshibaSemiconductor.pdf