GT60J323H Datasheet - Toshiba

GT60J323H-Toshiba.pdf

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Datasheet Details

Part number:

GT60J323H

Manufacturer:

Toshiba ↗

File Size:

234.69 KB

Description:

Silicon n-channel igbt.

GT60J323H, Silicon N-Channel IGBT

GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Abso

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GT60J323H Silicon N-Channel IGBT Toshiba

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