Datasheet4U Logo Datasheet4U.com

GT60J323H Datasheet - Toshiba

GT60J323H Silicon N-Channel IGBT

GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Abso.

GT60J323H-Toshiba.pdf

Preview of GT60J323H PDF
GT60J323H Datasheet Preview Page 2 GT60J323H Datasheet Preview Page 3

Datasheet Details

Part number:

GT60J323H

Manufacturer:

Toshiba ↗

File Size:

234.69 KB

Description:

Silicon n-channel igbt.

GT60J323H Distributor

📁 Related Datasheet

GT60J323 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT60J321 Silicon N-Channel IGBT (Toshiba)

GT60J322 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT605G 6 Amp Glass Passivated Quick Connect Rectifier (TAITRON)

GT60M101 Insulated Gate Bipolar Transistor (ETC)

GT60M104 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT60M301 Silicon N-Channel MOSFET (Toshiba Semiconductor)

GT60M302 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

GT60J323H GT60J323H Silicon N-Channel IGBT Toshiba