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GT60J321 Datasheet - Toshiba

GT60J321 Silicon N-Channel IGBT

GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temp.

GT60J321 Datasheet (183.83 KB)

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Datasheet Details

Part number:

GT60J321

Manufacturer:

Toshiba ↗

File Size:

183.83 KB

Description:

Silicon n-channel igbt.

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