GT600HF65T9H Datasheet (NJSME)

GT600HF65T9H, IGBT

Conditions Min.

Typ.

VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance IC=9.6mA, VCE=VGE TJ=25

GT600HF65T9H Features

* Trench & Field Stop IGBT

* Short Circuit Rated ＞6μs

* Low Switching Loss

* 100% RBSOA Tested(2×Ic)

* Low Stray Inductance

* Lead Free, Compliant with RoHS Requirement Applications:

* Commercial Agriculture Vehicles

* Motor Drives

* Solar Applications

* UPS