60N321 Datasheet - Toshiba Semiconductor

60N321 GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit C.

60N321 Features

* IABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR L

60N321-ToshibaSemiconductor.pdf