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60N321 GT60N321

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Description

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm.

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Features

* IABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR L

Applications

* Fourth Generation IGBT Unit: mm
* FRD included between emitter and collector
* Enhancement mode type
* High speed IGBT : tf = 0.25 μs (typ. ) (IC = 60 A) FRD : trr = 0.8 μs (typ. ) (di/dt =
* 20 A/μs)
* Low saturation voltage: VCE (sat) = 2.3 V (typ. ) (IC = 60

60N321 Distributors

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GT60N321 Toshiba Semiconductor
Toshiba Semiconductor 60N321-like datasheet