Datasheet4U Logo Datasheet4U.com

60N323 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – 60N323

📁 Similar Datasheet

  • 60N321 - GT60N321 (Toshiba Semiconductor)
  • 60N3LH5 - N-channel Power MOSFET (STMicroelectronics)
  • 60N03 - Power MOSFET (Tuofeng Semiconductor)
  • 60N03 - N-Channel MOSFET (Anachip)
  • 60N03 - N-Channel MOSFET (Cmos)
  • 60N035 - N-Channel Field Effect Transistor (ETC)
  • 60N03GP - AP60N03GP (Advanced Power Electronics)
  • 60N03L-10 - N-CHANNEL Power MOSFET (STMicroelectronics)
  • 60N03S - AP60N03S (Advanced Power Electronics)
  • 60N05 - N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by Toshiba

    Full PDF Text Transcription

    Click to expand full text
    GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm • diode included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode : trr = 0.35 μs (max.) (di/dt = −200 A/μs) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1 ms Diode forward current DC 1 ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IF IFP PC Tj Tstg ⎯ 1050 ±25 60 120 25 50 190 150 −55~150 0.8 V V A A W °C °C N･m JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.
    Published: |