60R190P Datasheet | Specifications & PDF Download

MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn

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MMF60R190P Datasheet MMF60R190P 600V 0.19Ω N-channel MOSFET  Description MMF60R190P is power MOSFET using Magnachip’s advanced super junction techno

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MMQ60R190P Datasheet MMQ60R190P 600V 0.19Ω N-channel MOSFET  Description MMQ60R190P is power MOSFET using Magnachip’s advanced super junction techno

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MMP60R190P Datasheet MMP60R190P 600V 0.19Ω N-channel MOSFET  Description MMP60R190P is power MOSFET using Magnachip’s advanced super junction techn

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch

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MML60R190P Datasheet MML60R190P 600V 0.19Ω N-channel MOSFET  Description MML60R190P is power MOSFET using magnachip’s advanced super junction techno

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVS60R190F

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R190P6 IIPW60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhance

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man

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Isc N-Channel MOSFET Transistor IPB60R190P6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on)

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Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVS60R190F

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