60R600CP Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor IPB60R600CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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;@3-'A-''5@ 5WWT>?BC> $ ; B 1 ='= -: > 5 > ? ;= 8MI[\YMZ U )DK: G H ; > H / HG L . X U2 A H F 6A DK <6H : 8 =6F <: U LH F : B :

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isc N-Channel MOSFET Transistor IPP60R600CP，IIPP60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi

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9?9-'@-''4? 4VVS=>AB= # : A 0<& <,9 =4=>: < 7LHZ[XLY U)DK: GH;>H/ HG L . X U2 AHF6 ADK <6H: 8=6F<: U LHF: B : 9J9HF6H: 9 # <: /?.>%

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IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current c

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;@3-'A-''5@ 5WWT>?BC> $ ; B 1 ='= -: > 5 > ? ;= 8MI[\YMZ U )DK: G H ; > H / HG L . X U2 A H F 6A DK <6H : 8 =6F <: U LH F : B :

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IPB60R600CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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9??-'@-''4? 4VVS=>AB= # : A 0<& < ,9 = 4 = > :< 7LHZ[XLY V )DL: H I; > I/ HG M . X V2 A I G 6A DL <6I : 8 =6G <: V MI G : B : 9

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isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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