IPD60R600CP Datasheet, Mosfet, INCHANGE

IPD60R600CP Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.6Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD60R600CP

Manufacturer:

INCHANGE

File Size:

237.28kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD60R600CP Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R600CP

INCHANGE

📁 Related Datasheet

IPD60R600C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.6 Final Powe.

IPD60R600C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.

IPD60R600CM8 - MOSFET (Infineon)
IPD60R600CM8 MOSFET 600V CoolMOSª CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSF.

IPD60R600CP - Power Transistor (Infineon Technologies)
IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current c.

IPD60R600E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.2 Final Powe.

IPD60R600E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.

IPD60R600P6 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Man.

IPD60R600P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R600P6,IIPD60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.

IPD60R600P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.

IPD60R600P7 - MOSFET (Infineon)
IPD60R600P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.