60S2 Datasheet | Specifications & PDF Download

Description The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficie

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ISL9R860P2, ISL9R860S2, ISL9R860S3S April 2002 ISL9R860P2, ISL9R860S2, ISL9R860S3S 8A, 600V Stealth™ Diode General Description The ISL9R860P2, ISL9R

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RECORDS OF REVISION MODEL No ： LS060S2UD01 SPEC No. Date NO. PAGE LCP-1310002 2010.03.03 - - SUMMARY - LCP-1310002-1 NOTE 1st Issue NOTICE LC

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www.STCMCU.com Mobile:(86)13922809991 Tel:86-755-82948412 Fax:86-755-82905966 . d e STC12C5A60S2 series MCU t i m i L STC12LE5A60S2 series MCU U C

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ESJC60S25 300mA 25kV --nS High Voltage Silicon Rectifier Diode ------------------------------------------------------------------------------------

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 Product Introduction Token Offers Dielectric RF Filters for Telecoms. Features :  Suitable for surface mount and reflow soldering.  Excellent mech

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NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and pro

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Isc N-Channel MOSFET Transistor IRL60S216 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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www.STCMCU.com Mobile:(86)13922809991 Tel:86-755-82948412 Fax:86-755-82905966 SSTTCSC1T12C2LCE5D5MAAa6Ct6a0U0SSS2h2LseseeiemrtriieiteessdM.MCCUU

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TH16060S2 VITALCONN 16060S2 Please note that above information is subject to change without notice. For more info please send us an email to info@vi

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ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S November 2002 ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15A, 600V Stealth™ Diode Gener

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ISL9R460P2, ISL9R460S2, ISL9R460S3S July 2003 ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth™ Diode General Description The ISL9R460P2, ISL9R4

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STC15series MCU Data Sheet STC15series MCU Data Sheet —— Super Strong Anti-Disturbance, Super Advanced Encryption —— Adopt the eighth generation of S

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Automation Controls Catalog High sensitivity, 100 mW GN RELAYS (AGN) Nominal operating power, 2 Form C and 1 A Slim body type relays FEATURES 1. Sli

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1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 D3PAK APT60S20B(G) 200V 75A APT60S20S(G) 200V 75A *G Denotes RoHS Compliant, Pb Fre

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STC micro STC8F family of Micro-controllers Reference Manual Date of update：2018/3/20 -1- 67& )6HULHV0DQXDO Contents 1 Overview

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IPN60R2K1CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

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FMW60N160S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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POWR-GARD® Fuse Datasheet TRADITIONAL HIGH-SPEED FUSES 150/250/600 Vac • Very Fast-Acting • 1-1200 A Specifications Voltage Ratings L15S: L25S:

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M6MGB/T160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-B

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