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DGTD65T60S2PT - FIELD STOP IGBT

Description

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 60A.
  • High Input Impedance.
  • trr = 110ns (typ) @ diF/dt = 500A/µs.
  • Eoff = 0.53mJ @ TC=25°C.
  • Maximum Junction Temperature 175°C.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Datasheet preview – DGTD65T60S2PT

Datasheet Details

Part number DGTD65T60S2PT
Manufacturer DIODES
File Size 1.56 MB
Description FIELD STOP IGBT
Datasheet download datasheet DGTD65T60S2PT Datasheet
Additional preview pages of the DGTD65T60S2PT datasheet.

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Full PDF Text Transcription

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Description The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential. DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 60A  High Input Impedance  trr = 110ns (typ) @ diF/dt = 500A/µs  Eoff = 0.53mJ @ TC=25°C  Maximum Junction Temperature 175°C  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Applications  UPS  Welder  Solar Inverter  IH Cooker Mechanical Data  Case: TO-247 (Type MC)  Case Material: Molded Plastic. “Green” Molding Compound.
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