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DGTD65T60S2PT Datasheet Field Stop IGBT

Manufacturer: Diodes Incorporated

Overview: Description The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent.

General Description

The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential.

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 60A.
  • High Input Impedance.
  • trr = 110ns (typ) @ diF/dt = 500A/µs.
  • Eoff = 0.53mJ @ TC=25°C.
  • Maximum Junction Temperature 175°C.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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