DGTD65T60S2PT Description
The DGTD65T60S2PT is produced using advanced Field Stop Trench IGBT 2nd Generation Technology, which not only gives high-switching efficiency, but is also extremely rugged and excellent quality for applications where low conduction losses are essential. DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247.
DGTD65T60S2PT Key Features
- High Speed Switching & Low Power Loss
- VCE(sat) = 1.85V @ IC = 60A
- High Input Impedance
- trr = 110ns (typ) @ diF/dt = 500A/µs
- Eoff = 0.53mJ @ TC=25°C
- Maximum Junction Temperature 175°C
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)