DGTD65T40S2PT Description
The DGTD65T40S2PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high switching performance.
DGTD65T40S2PT Key Features
- High Speed Switching & Low Power Loss
- VCE(SAT) = 1.8V @ IC = 40A
- tRR = 60ns (Typ) @ diF/dt = 820A/µs
- EOFF = 0.4mJ @ TC = +25°C
- Maximum Junction Temperature +175°C
- Lead-Free Finish & RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)