DGTD120T25S1PT Description
The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat) , excellent quality and high-switching performance. DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247.
DGTD120T25S1PT Key Features
- High Speed Switching & Low VCE(sat) Loss
- VCE(sat) = 2.0V @ IC = 25A
- High Input Impedance
- trr = 100ns (typ) @ diF/dt = 500A/µs
- Ultra-Soft, Fast Recovery Anti-parallel Diode
- Ultra Narrowed VF Distribution Control
- Positive Temperature Coefficient For Easy Parallelling
- Maximum Junction Temperature 175°C
- Lead-Free Finish & RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)