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DGTD120T25S1PT Datasheet 1200v Field Stop IGBT

Manufacturer: Diodes Incorporated

Overview: Description The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat) , excellent quality and high-switching performance.

General Description

The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat) , excellent quality and high-switching performance.

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247

Key Features

  • High Speed Switching & Low VCE(sat) Loss.
  • VCE(sat) = 2.0V @ IC = 25A.
  • High Input Impedance.
  • trr = 100ns (typ) @ diF/dt = 500A/µs.
  • Ultra-Soft, Fast Recovery Anti-parallel Diode.
  • Ultra Narrowed VF Distribution Control.
  • Positive Temperature Coefficient For Easy Parallelling.
  • Maximum Junction Temperature 175°C.
  • Lead-Free Finish & RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

More Datasheets from Diodes Incorporated

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DGTD120T25S1PT Distributor