DGTD65T15H2TF Description
The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high-performance, excellent quality, and high ruggedness.
DGTD65T15H2TF Key Features
- High Ruggedness for Motor Control
- VCE(sat) Positive Temperature Coefficient
- Very Soft, Fast Recovery Anti-Parallel Diode
- Low EMI
- Maximum Junction Temperature +175°C
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)