DGTD65T50S1PT Overview
The DGTD65T50S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247.
DGTD65T50S1PT Key Features
- High-Speed Switching & Low Power Loss
- VCE(sat) = 1.85V @ IC = 50A
- High Input Impedance
- trr = 80ns (typ) @ diF/dt = 1000A/µs
- Eoff = 0.55mJ @ TC=25°C
- Maximum Junction Temperature 175°C
- Lead-Free Finish & RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)