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DGTD65T50S1PT Datasheet Field Stop IGBT

Manufacturer: Diodes Incorporated

Overview: Description The DGTD65T50S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance.

General Description

The DGTD65T50S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance.

DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247

Key Features

  • High-Speed Switching & Low Power Loss.
  • VCE(sat) = 1.85V @ IC = 50A.
  • High Input Impedance.
  • trr = 80ns (typ) @ diF/dt = 1000A/µs.
  • Eoff = 0.55mJ @ TC=25°C.
  • Maximum Junction Temperature 175°C.
  • Lead-Free Finish & RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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