64k Datasheet | Specifications & PDF Download

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® MOTOROLA MCM6665A MOS 64K BIT DYNAMIC RAM The MCM6665A is a 65,536 bit, high-speed, dynamic RandomAccess Memory. Organized as 65,536 one-bit word

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PPT 10/100Base-T Dual port Magnetics Features: “Meet The Isolation,Insertion Loss and Return Loss Requirements of IEEE802.3 “Available Industry Stan

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0.5±0.5 2.59 3.585 0.5±0.5 4.8 5.795 WEO012864K OLED Graphic 128x64 dots 73.0±0.2 POL 72.0±0.2 63.41(VA) 61.41 (AA) Active Area 2.7 Dots 128*64 2

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HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 7008S/L Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location

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25AA640/25LC640 64K SPI™ Bus Serial EEPROM Device Selection Table Part Number 25AA640 25LC640 25LC640 VCC Range 1.8-5.5V 2.5-5.5V 4.5-5.5V Max Clo

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EEPROM Serial 64-Kb I2C N24C64 Description The N24C64 is a EEPROM Serial 64−Kb I2C device, organized internally as 256 pages of 32 bytes each. This de

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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AT27C1024 Features • Fast Read Access Time - 45 ns • Low Power CMOS Operation • – 100 µA max. Standby – 30 mA max. Active at 5 MHz JEDEC Standard Pack

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MITSUBISHI LSls M5K4164ANP-12, -15 65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs,

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE

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Turbo IC, Inc. 24C64 CMOS I²C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES : • Extended Power Supply Voltage Singl

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FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM December 2001 FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM General De

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： C-7 :(086)0755-26919178 : (086)0755 -26911092 ：Http://www.av-display.com.cn SHENZHEN AV-DISPLAY CO.,LTD Address: North East C-7 Building, Wenchan

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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A276308A 64K X 8 OTP CMOS EPROM Document Title 64K X 8 OTP CMOS EPROM Revision History Rev. No. 0.0 0.1 1.0 History Initial issue Change Program Veri

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A426316B Series Preliminary Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 64K X 16 CMOS DYNAMIC RAM WITH

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