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Integrated Device Technology
IDT7198L - CMOS STATIC RAMs 64K (16K x 4-BIT) Added Chip Select and Output Controls
® CMOS STATIC RAMs 64K (16K x 4-BIT) Added Chip Select and Output Controls IDT7198S IDT7198L Integrated Device Technology, Inc. FEATURES: • Fast O.
STMicroelectronics
M27C512 - 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump.
STMicroelectronics
M27C1024 - 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur.
Sanyo
LC3564RT-10LV - 64K (8192 words x 8 bits) SRAM
Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchr.
Motorola
MCM69D618 - 64K x 18 Bit Synchronous Dual I/O / Dual Address SRAM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69D618/D 64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM The MCM69D618 is a 1M.
Cypress Semiconductor
CY7C1212F - 1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212F www.DataSheet4U.com 1-Mbit (64K x 18) Pipelined Sync SRAM Features • Registered inputs and outputs for pipelined operation • 64K × 18 commo.
AiT Semiconductor
A24C64 - TWO-WIRE SERIAL 64K BITS (8192 x 8) EEPROM
AiT Semiconductor Inc. www.ait-ic.com A24C64 EEPROM TWO-WIRE SERIAL 64K BITS (8192 X 8) DESCRIPTION FEATURES A24C64 provides 65536 bits of serial .
LAPIS
MR44V064B - 64k-Bit FeRAM
MR44V064B 64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) I2C FEDR44V064B-01 Issue Date: Jan. 08, 2016 GENERAL DESCRIPTION The MR.
FairchildSemiconductor
24C64 - 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM
FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM December 2001 FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM General De.
Fujitsu
MB81C74 - CMOS 64K-BIT HIGH-SPEED SRAM
March 1990 Edition 3.0 DATA SHEET MBS1 C74-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM cP FUJITSU 16K Words x 4 Bits High-Speed CMOS Static Random Ac.
Catalyst Semiconductor
CAT28C64B - 64K-Bit CMOS PARALLEL E2PROM
CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby:.
Catalyst Semiconductor
CAT28C65B - 64K-Bit CMOS PARALLEL E2PROM
CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: s Commercial, Industrial and Automotive – 120/150ns s Low Power CMOS Dissip.
Catalyst Semiconductor
CAT28HT64 - 64K-Bit CMOS PARALLEL E2PROM
Advanced CAT28HT64 64K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: Extended Temperature: 170˚C s Hardware and Software Write Protec.
AMIC Technology
A62S6316 - 64K X 16 BIT LOW VOLTAGE CMOS SRAM
A62S6316 Series www.DataSheet4U.com Preliminary Document Title 64K X 16 BIT LOW VOLTAGE CMOS SRAM 64K X 16 BIT LOW VOLTAGE CMOS SRAM Revision Histo.
Cypress Semiconductor
CY15B101N - 1-Mbit (64K x 16) Automotive F-RAM Memory
CY15B101N 1-Mbit (64K × 16) Automotive F-RAM Memory 1-Mbit (64K × 16) Automotive F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F.
ATMEL Corporation
AT29C1024 - 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory
AT29C1024 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (.
Mitsubishi
M5K4164AND-15 - 64K-Bit DRAM
MITSUBISHI LSls MsK4164AND-12, -15 65 536-BIT (65 536-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by 1-bit dynamic RAMs, .
Mitsubishi
M5K4164ANP-20 - 64K-Bit DRAM
MITSUBISHI LSls MSK4164ANP-20 6SS36-BIT (6SS36-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65536-word by l-bit dynamic RAMs, fabricat.
Mitsubishi
M5K4164AP-15 - 64K-Bit DRAM
MITSUBISHI LSI. M5K4164AP-12, -15 65 536·BIT (65 536·WORD BY 1.BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, f.
STMicroelectronics
M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE.