65W Datasheet | Specifications & PDF Download

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sales.Mr.wang13826508770 www.sztssd.com FINE MADE MICROELECTRONICS GROUP CO., LTD. XPM5220 (：S&CIC2196) 65W USB PD 1  - Quick Charge 2.0/3

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MOSFETs Silicon N-Channel MOS (DTMOS) TK5P65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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Date: - 15th October, 2013 Data Sheet Issue:- P2 Phase Control Thyristor Types N0465WN140 to N0465WN160 Absolute Maximum Ratings VDRM VDSM VRRM VRS

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Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control Reverse Conducting Serie

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N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS  General purpose inverte

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* z-z -,--= 2 .---= --= -= =c r s an AMP company Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I .300 v2.00 (

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Date: - 15th October, 2013 Data Sheet Issue:- P2 Phase Control Thyristor Types N0465WN140 to N0465WN160 Absolute Maximum Ratings VDRM VDSM VRRM VRS

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www.DataSheet4U.com TOTAL POWER INT'L 65W Single Output Medical Type Features : Low leakage current 0.3mA MPS-65 series Universal AC input / Full

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IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM JANUARY 2015 KEY FEATURES  High-speed acces

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Rev. 1.5, Apr. 2017 K4A8G165WC 8Gb C-die DDR4 SDRAM x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS R

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isc N-Channel MOSFET Transistor TK5P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.22mΩ. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V,

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isc N-Channel MOSFET Transistor TK8P65W ·FEATURES ·Drain Current ID= 7.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-R

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www.DataSheet4U.com NCP2821 2.65 W Filterless with Selectable Gain Class−D Audio Amplifier NCP2821 is a cost effective mono audio power amplifier des

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Green SILICON CARBIDE SCHOTTKY DIODE LSC06065W REVERSE VOLTAGE – 650 Volts FORWARD CURRENT – 6 Amperes FEATURES • Positive temperature coefficient f

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TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-

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Plastic Infrared Emitting Diode OP265WPS Features: • T-1 (3 mm) package style • Broad irradiance pa ern • Point source with flat lens • Higher power o

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R MAIN CHARACTERISTICS IC VCE Vcesat-ty（p Vge=15V） 40 A 650V 1.7V N N-CHANNEL IGBT JT040K065WED/AED Package  UPS  APPLICATIONS Genera

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TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) PACKAGING NO. (Ver.)

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