GOFORD General Description The 6616A uses advance.
A-Data Technology
VDS6616A4A - Synchronous DRAM
V-Data Synchronous DRAM VDS6616A4A 1M x 16 Bit x 4 Banks General Description The VDS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 w.
A-Data Technology
ADS6616A4A - Synchronous DRAM
A-Data Synchronous DRAM ADS6616A4A 1M x 16 Bit x 4 Banks General Description The ADS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 w.
GOFORD
6616A - MOSFET
GOFORD General Description The 6616A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages a.
