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CHA2110-98F - 7-12GHz LNA
CHA2110-98F 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. I.CE3512K2 - 12GHz Super Low Noise FET
RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION Super Low Noise and High Gain Hollow (Air Cavity) Plastic .CE3514M4 - 12GHz Low Noise FET
RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION Low Noise and High Gain Original Du.MAAM71200 - Low Noise GaAs MMIC Amplifier 7.5-12GHz
MAAM71200 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Features • Noise Figure: 2.3 dB Typical • Gain: 16.5 dB Typical • Low Bias Current • Sing.NBB-X-K1 - CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312 0 Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The .RFUV1003 - 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER
RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G.CHA6105 - 8-12GHz Driver Amplifier
CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA6105 is a monolithic three-stage medium power amplifi.TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr.MLA-01122B-C4 - 1 - 12GHz Packaged Low-Noise MMIC Amplifier
MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier FEATURES • Wideband: • NF: 1.0 to 12 GHz 1.3 dB @ 2.0 GHz 1.4 dB @ 6.0 GHz 1.9 dB @ 12.0 .ADL6332 - 0.38GHz to 12GHz RxVGA
FEATURES ► Broadband RxVGA interfacing LNA and beamformer to RF ADC ► Operating frequency range: 0.38 GHz to 12 GHz, two product variants ► ADL6332-A:.