70N08 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufactu

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NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufactu

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche voltage and cur

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(o

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(o

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isc N-Channel MOSFET Transistor IXTP70N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche vo

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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Isc N-Channel MOSFET Transistor FQB70N08 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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UNISONIC TECHNOLOGIES CO., LTD UT170N08H Preliminary 170A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT170N08H is an N-channel enhancement

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S

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OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S

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%&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 6A G UIS, 100% Tested S P

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 6A G UIS, 100% Tested S P

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