70N08 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate

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NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufactu

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BSZ070N08LS5 MOSFET OptiMOSª5 Power-Transistor, 80 V Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC co

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NTP70N08, NTB70N08, NTP70N08L, NTB70N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufactu

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S

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FQB70N08 / FQI70N08 August 2000 QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.7mΩ ·Enhancement mode ·Fast Switch

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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isc N-Channel MOSFET Transistor IXTP70N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche vo

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FQAF70N08 August 2000 QFET FQAF70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=90A Rds(on)(typ)=6m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Compliant)

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 6A G UIS, 100% Tested S P

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 15A G UIS, 100% Tested S

(9 views)

FQPF70N08 August 2000 QFET FQPF70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 65mΩ ID 6A G UIS, 100% Tested S P

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FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

(8 views)