Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case
IXTA70N085T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTP70N085T, IXTA70N085T
Manufacturer:
IXYS Corporation
File Size:
169.90 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTP70N085T, IXTA70N085T.
Please refer to the document for exact specifications by model.