IXTP7N60P Datasheet, mosfet equivalent, IXYS

IXTP7N60P Features

• Mosfet l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless other

PDF File Details

Part number:

IXTP7N60P

Manufacturer:

IXYS

File Size:

173.38kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

IXTP7N60P

IXYS

📁 Related Datasheet

IXTP7N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP7N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltag.

IXTP7N60PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP7N60PM ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VG.

IXTP7N60PM - Power MOSFET (IXYS Corporation)
Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I.

IXTP70N075T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA70N075T2 IXTP70N075T2 VDSS = ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) S.

IXTP70N075T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP70N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP70N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP70N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP70N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(o.

IXTP75N10P - N-Channel MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m.

IXTP75N10P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP75N10P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 25mΩ ·Fully characterized avalanche voltage and c.

IXTP76N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP76N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche volt.