INCHANGE manufacturer logo Part number: IXTP08N100P Manufacturer: INCHANGE File Size: 246.94kb Download: 📄 Datasheet Description: N-channel mosfet.
IXTP08N100D2 - Power MOSFET (IXYS) Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) > RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab).
IXTP08N100P - Power MOSFET (IXYS) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.
IXTP08N50D2 - N-Channel MOSFET (IXYS Corporation) Depletion Mode MOSFET N-Channel IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 D VDSX = ID(on) > RDS(on) 500V 800mA 4.6 TO-252 (IXTY) G S Symbol VDSX VG.
IXTP01N100D - N-Channel MOSFET (IXYS Corporation) Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.
IXTP02N120P - Power MOSFET (IXYS) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T.
IXTP02N50D - High Voltage MOSFET (IXYS Corporation) High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 = RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.
IXTP05N100 - Power MOSFET (IXYS Corporation) High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
IXTP05N100 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IXTP05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.
IXTP05N100M - N-Channel MOSFET (IXYS) High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Sym.
IXTP05N100M - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17Ω(Max) ·Fast Swi.
