* High Voltage Package (TO-263HV)
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density
* Space Savings Applications
* Switch-Mode and Resonant-Mode Power Suppli
IXTP05N100 Datasheet (190.35 KB)
IXTP05N100
IXYS Corporation
190.35 KB
Power mosfet.
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
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