IXTP05N100M Datasheet - IXYS

IXTP05N100M N-Channel MOSFET

High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting tor.

IXTP05N100M Features

* Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density © 2008 IXYS CORPORATION, All rights reserved DS100014A(08/08) Symbol gfs Ciss Coss Crss td

IXTP05N100M-IXYS.pdf