IXTP10N60PM Datasheet - IXYS Corporation

IXTP10N60PM PolarHV Power MOSFET

www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,.

IXTP10N60PM Features

* z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z 1.13/10 Nm/lb.in. 4 g Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Adv

IXTP10N60PM_IXYSCorporation.pdf