IXTP10N60PM
IXYS Corporation
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Polarhv power mosfet.
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IXTP10N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP10N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP10N60P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = 600V ID25 = 10A RDS(on) ≤ 740.
IXTP10N60PM - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 0.74Ω@VGS=10V ·100%.
IXTP100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTP100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.
IXTP102N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
IXTP10P50P - Power MOSFET
(IXYS)
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS.
IXTP110N055P - PolarHT Power MOSFET
(IXYS Corporation)
..
PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P IXTA 110N055P IXTP 110N055P
VDSS ID25
RDS(on)
= 55 V = 110 A =.