IXTP10N60P Datasheet - INCHANGE

IXTP10N60P, N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP10N60P *.

Features

* Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IXTP10N60P-INCHANGE.pdf