IXTP12N65X2 Datasheet, Mosfet, INCHANGE

PDF File Details

Part number:

IXTP12N65X2

Manufacturer:

INCHANGE

File Size:

249.78kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

IXTP12N65X2

INCHANGE

📁 Related Datasheet

IXTP12N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N65X2 IXTP12N65X2 IXTH12N65X2 VDSS = ID25 = RDS(on) 650V.

IXTP12N65X2M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP12N65X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% ava.

IXTP12N65X2M - Power MOSFET (IXYS)
X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM.

IXTP12N50P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXT.

IXTP12N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP12N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.5Ω@VGS=10V ·Fully characterized avalanche volta.

IXTP12N50PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP12N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 500mΩ@.

IXTP12N50PM - Power MOSFET (IXYS)
PolarTM Power MOSFET IXTP12N50PM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG.

IXTP12N70X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 300mΩ@VGS= 10V ·Fast Sw.

IXTP12N70X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTA12N70X2 IXTP12N70X2 IXTH12N70X2 VDSS = ID25 =  RDS(on) 700.

IXTP12N70X2M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP12N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% ava.