IXTP12N65X2M Datasheet, Mosfet, INCHANGE

IXTP12N65X2M Features

• Mosfet
• High power dissipation
• Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust devi

PDF File Details

Part number:

IXTP12N65X2M

Manufacturer:

INCHANGE

File Size:

257.56kb

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📄 Datasheet

Description:

N-channel mosfet.

IXTP12N65X2M Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IXTP12N65X2M

INCHANGE

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