IXTP120N075T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA120N075T2 IXTP120N075T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg .
IXTP120N04T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
IXTA120N04T2 IXTP120N04T2
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
40V 120A 6.1mΩ
TO-263
Symbo.
IXTP120N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP120N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTP12N50P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA12N50P IXTI12N50P IXTP12N50P
VDSS = ID25 = ≤RDS(on)
500V 12A 500mΩ
TO-263 (IXT.
IXTP12N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP12N50P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.5Ω@VGS=10V ·Fully characterized avalanche volta.
IXTP12N50PM - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP12N50PM
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 500mΩ@.