IXTP102N15T Datasheet, Mosfet, INCHANGE

IXTP102N15T Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V
• Fully characterized avalanche voltage and current
• 100% avalanche tested
• Minimum Lot-to-Lot

PDF File Details

Part number:

IXTP102N15T

Manufacturer:

INCHANGE

File Size:

246.26kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTP102N15T Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 I

TAGS

IXTP102N15T

INCHANGE

📁 Related Datasheet

IXTP102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTP100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP100N15X4 - Power MOSFET (IXYS)
X4-Class Power MOSFETTM Advance Technical Information IXTA100N15X4 IXTP100N15X4 VDSS = ID25 = RDS(on) 150V 100A 11.5m N-Channel Enhancement Mode.

IXTP10N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP10N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP10N60P - Power MOSFET (IXYS)
PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740.

IXTP10N60PM - PolarHV Power MOSFET (IXYS Corporation)
.. Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated .

IXTP10N60PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V ·100%.

IXTP10P50P - Power MOSFET (IXYS)
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS.

IXTP110N055P - PolarHT Power MOSFET (IXYS Corporation)
.. PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A =.