IXTP110N055P Datasheet, Mosfet, IXYS Corporation

IXTP110N055P Features

  • Mosfet z Md Weight 1.13/10 Nm/lb.in. 5.5 4 3 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Sym

PDF File Details

Part number:

IXTP110N055P

Manufacturer:

IXYS Corporation

File Size:

151.53kb

Download:

📄 Datasheet

Description:

Polarht power mosfet.

Datasheet Preview: IXTP110N055P 📥 Download PDF (151.53kb)
Page 2 of IXTP110N055P Page 3 of IXTP110N055P

TAGS

IXTP110N055P
PolarHT
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXTP110N055P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP110N055P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Fully characterized avalanche voltage an.

IXTP110N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP110N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP110N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP110N055T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg .

IXTP110N055T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP110N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v.

IXTP110N12T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP110N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP110N12T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode .

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

IXTP100N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP100N15X4 - Power MOSFET (IXYS)
X4-Class Power MOSFETTM Advance Technical Information IXTA100N15X4 IXTP100N15X4 VDSS = ID25 = RDS(on) 150V 100A 11.5m N-Channel Enhancement Mode.

Stock and price

part
IXYS Corporation
MOSFET N-CH 55V 110A TO220AB
DigiKey
IXTP110N055P
0 In Stock
Qty : 50 units
Unit Price : $1.99
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts