IXTP110N055P
IXYS Corporation
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Polarht power mosfet.
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IXTP110N055P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP110N055P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤13.5mΩ ·Fully characterized avalanche voltage an.
IXTP110N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP110N055T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTP110N055T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T IXTP110N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTP110N055T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA110N055T2 IXTP110N055T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg .
IXTP110N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP110N055T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v.
IXTP110N12T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP110N12T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTP110N12T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Advance Technical Information
IXTA110N12T2 IXTP110N12T2
VDSS = 120V
ID25 = 110A RDS(on) 14m
N-Channel Enhancement Mode .
IXTP100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTP100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.