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IXTP180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

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Description

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.

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Datasheet Specifications

Part number
IXTP180N055T
Manufacturer
IXYS Corporation
File Size
117.16 KB
Datasheet
IXTP180N055T_IXYSCorporation.pdf
Description
(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

Features

* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VD

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