IXTP180N055T
IXYS Corporation
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(ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet.
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IXTP180N085T - Power MOSFET
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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTP180N085T - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
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·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.
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VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
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Sy.
IXTP180N10T - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
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·FEATURES ·Static drain-source on-resistance:
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IXTP182N055T - Power MOSFET
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Preliminary Technical Information
TrenchMVTM Power MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
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IXTP18N60PM - Power MOSFET
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N-Channel Enhancement Mode Avalanche Rated
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RDS(on) ≤
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OVER.
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P-Channel Enhancement Mode Avalanche Rated
IXTY18P10T IXTA18P10T IXTP18P10T
Symbol
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ID25 IDM
IA EAS
PD
TJ.
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