* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VD
IXTP180N055T Datasheet (117.16 KB)
IXTP180N055T
IXYS Corporation
117.16 KB
(ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet.
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55.
📁 Related Datasheet
IXTP180N085T Power MOSFET (IXYS Corporation)
IXTP180N085T N-Channel MOSFET (INCHANGE)
IXTP180N10T Power MOSFET (IXYS Corporation)
IXTP180N10T N-Channel MOSFET (INCHANGE)
IXTP182N055T Power MOSFET (IXYS Corporation)
IXTP182N055T N-Channel MOSFET (INCHANGE)
IXTP18N60PM N-Channel MOSFET (INCHANGE)
IXTP18N60PM Power MOSFET (IXYS)
IXTP18P10T Power MOSFETs (IXYS)
IXTP100N04T2 Power MOSFET (IXYS)
TAGS
Image Gallery
