IXTP180N10T Datasheet, Mosfet, IXYS Corporation

IXTP180N10T Features

  • Mosfet z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z

PDF File Details

Part number:

IXTP180N10T

Manufacturer:

IXYS Corporation

File Size:

149.16kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTP180N10T 📥 Download PDF (149.16kb)
Page 2 of IXTP180N10T Page 3 of IXTP180N10T

IXTP180N10T Application

  • Applications z Automotive - Motor Drives - 42V Power Bus - ABS Systems z DC/DC Converters and Off-line UPS z Primary Switch for 24V and 48V Systems

TAGS

IXTP180N10T
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXTP180N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP180N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.

IXTP180N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP180N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP182N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP182N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP182N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP18N60PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max) ·Fast Sw.

IXTP18N60PM - Power MOSFET (IXYS)
PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP18N60PM VDSS = ID25 = RDS(on) ≤ 600V 9A 420mΩ OVER.

IXTP18P10T - Power MOSFETs (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ.

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.

Stock and price

Littelfuse Inc
MOSFET N-CH 100V 180A TO220AB
DigiKey
IXTP180N10T
2515 In Stock
Qty : 500 units
Unit Price : $3.31
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts