IXTP18N60PM N-Channel MOSFET

INCHANGE

IXTP18N60PM Description

isc N-Channel MOSFET Transistor *.

IXTP18N60PM Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTP18N60PM Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Curr

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Datasheet Details

Part number: IXTP18N60PM
Manufacturer: INCHANGE
File Size: 246.27 KB
Datasheet: IXTP18N60PM-INCHANGE.pdf
Description: N-Channel MOSFET

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