IXTP18N60PM Datasheet, Mosfet, INCHANGE

PDF File Details

Part number:

IXTP18N60PM

Manufacturer:

INCHANGE

File Size:

246.27kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

IXTP18N60PM

INCHANGE

📁 Related Datasheet

IXTP18N60PM - Power MOSFET (IXYS)
PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP18N60PM VDSS = ID25 = RDS(on) ≤ 600V 9A 420mΩ OVER.

IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.

IXTP180N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP180N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP180N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP180N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.

IXTP180N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP180N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP182N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP182N055T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP182N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP18P10T - Power MOSFETs (IXYS)
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ.

IXTP100N04T2 - Power MOSFET (IXYS)
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.