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IXTP100N04T2, IXTA100N04T2 Datasheet - IXYS

IXTP100N04T2 Power MOSFET

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 100A RDS(on) ≤ 7mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 second.

IXTA100N04T2-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTP100N04T2, IXTA100N04T2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXTP100N04T2, IXTA100N04T2

Manufacturer:

IXYS

File Size:

198.04 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTP100N04T2, IXTA100N04T2.
Please refer to the document for exact specifications by model.

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IXTP100N04T2 IXTA100N04T2 Power MOSFET IXYS

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