IXTP110N055T2 Datasheet - IXYS

IXTP110N055T2 Power MOSFET

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 55 V 55 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 110 300 50 400 180 -55 +175 175 -55 +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 .

IXTP110N055T2 Features

* International Standard Packages

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier 175°C Operating Temperature

* High Current Handling Capability

* ROHS Compliant

* High Performance Trench Technology for extremely low RDS(on) Advantages

* High Pow

IXTP110N055T2 Datasheet (318.67 KB)

IXTP110N055T2 Datasheet Preview — Preview of IXTP110N055T2 PDF

Datasheet Details

Part number:

IXTP110N055T2

Manufacturer:

IXYS

File Size:

318.67 KB

Description:

Power mosfet.

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