IXTP110N055T2 - Power MOSFET
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 55 V 55 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 110 300 50 400 180 -55 +175 175 -55 +175 A A A mJ W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 .
IXTP110N055T2 Features
* International Standard Packages
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier
175°C Operating Temperature
* High Current Handling Capability
* ROHS Compliant
* High Performance Trench
Technology for extremely low RDS(on)
Advantages
* High Pow