Datasheet Details
- Part number
- IXTP110N12T2
- Manufacturer
- INCHANGE
- File Size
- 246.23 KB
- Datasheet
- IXTP110N12T2-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTP110N12T2 Description
isc N-Channel MOSFET Transistor IXTP110N12T2 *.
IXTP110N12T2 Features
* Static drain-source on-resistance:
RDS(on) ≤ 14mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTP110N12T2 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
110
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
517
Tj
Operating Junction Temperature
-55~175
Tstg
Storage T
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