IXTP110N12T2 Datasheet - INCHANGE

IXTP110N12T2, N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP110N12T2 *.

Features

* Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 517 Tj Operating Junction Temperature -55~175 Tstg Storage T

IXTP110N12T2-INCHANGE.pdf