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IXTP180N085T, IXTA180N085T Datasheet - IXYS Corporation

IXTP180N085T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 180 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = .

IXTP180N085T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/D

IXTA180N085T-IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTP180N085T, IXTA180N085T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXTP180N085T, IXTA180N085T

Manufacturer:

IXYS Corporation

File Size:

204.77 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTP180N085T, IXTA180N085T.
Please refer to the document for exact specifications by model.

IXTP180N085T Distributor

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TAGS

IXTP180N085T IXTA180N085T Power MOSFET IXYS Corporation