TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-22
IXTA130N10T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTP130N10T, IXTA130N10T
Manufacturer:
IXYS Corporation
File Size:
143.01 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTP130N10T, IXTA130N10T.
Please refer to the document for exact specifications by model.