IXTP160N075T Datasheet - IXYS Corporation

IXTP160N075T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDS.

IXTP160N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off

IXTP160N075T Datasheet (168.84 KB)