IXTP16N50PM Datasheet, MOSFET, INCHANGE

IXTP16N50PM Features

  • Mosfet
  • Drain Source Voltage- : VDSS= 500V(Min)
  • Static drain-source on-resistance : RDS(on) ≤ 420mΩ@VGS=10V
  • 100% avalanche tested
  • Minimum Lot-to-Lot variatio

PDF File Details

Part number:

IXTP16N50PM

Manufacturer:

INCHANGE

File Size:

248.01kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IXTP16N50PM 📥 Download PDF (248.01kb)
Page 2 of IXTP16N50PM

IXTP16N50PM Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IXTP16N50PM
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IXTP16N50P - PolarHV Power MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (.

IXTP16N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP16N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche volta.

IXTP16N50PM - Power MOSFET (IXYS)
Advance Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) IXTP16N50PM VDSS = ID25 = RDS(on) ≤ 500V 7.5A 420mΩ N-Channel En.

IXTP160N04T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM.

IXTP160N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP160N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP160N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP160N085T - Power MOSFET (IXYS)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .

IXTP160N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP160N10T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts