IXTP160N085T - Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VD
IXTP160N085T Features
* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99347(02/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g
