IXTP160N04T2, IXTA160N04T2 Datasheet - IXYS

IXTP160N04T2 - Power MOSFET

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 160 120 400 80 600 250 -55 +175 175 -55 +175 A A A A mJ W  C  C  C Maximum Lead

IXTP160N04T2 Features

* International Standard Packages

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier 175°C Operating Temperature

* High Current Handling Capability

* ROHS Compliant

* High Performance Trench Technology for extremely low RDS(on) Advantages

* High Pow

IXTA160N04T2-IXYS.pdf