IXTP160N04T2 Datasheet, MOSFET, IXYS

IXTP160N04T2 Features

  • Mosfet
  • International Standard Packages
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier 175°C Operating Temperature
  • High Curren

PDF File Details

Part number:

IXTP160N04T2

Manufacturer:

IXYS

File Size:

312.26kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTP160N04T2 📥 Download PDF (312.26kb)
Page 2 of IXTP160N04T2 Page 3 of IXTP160N04T2

IXTP160N04T2 Application

  • Applications
  • Automotive Engine Control
  • Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)

TAGS

IXTP160N04T2
Power
MOSFET
IXYS

📁 Related Datasheet

IXTP160N04T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5mΩ@VGS=10V ·Fully characterized avalanche volt.

IXTP160N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.

IXTP160N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP160N085T - Power MOSFET (IXYS)
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) .

IXTP160N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.

IXTP160N10T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) .

IXTP160N10T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTP16N50P - PolarHV Power MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (.

IXTP16N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP16N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche volta.

IXTP16N50PM - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTP16N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 420mΩ@.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts