Datasheet4U Logo Datasheet4U.com

IXTP110N055T Datasheet - IXYS Corporation

IXTP110N055T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = .

IXTP110N055T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/D

IXTP110N055T Datasheet (207.00 KB)

Preview of IXTP110N055T PDF
IXTP110N055T Datasheet Preview Page 2 IXTP110N055T Datasheet Preview Page 3

Datasheet Details

Part number:

IXTP110N055T

Manufacturer:

IXYS Corporation

File Size:

207.00 KB

Description:

Power mosfet.

📁 Related Datasheet

IXTP110N055P PolarHT Power MOSFET (IXYS Corporation)

IXTP110N055P N-Channel MOSFET (INCHANGE)

IXTP110N055T N-Channel MOSFET (INCHANGE)

IXTP110N055T2 Power MOSFET (IXYS)

IXTP110N055T2 N-Channel MOSFET (INCHANGE)

IXTP110N12T2 N-Channel MOSFET (INCHANGE)

IXTP110N12T2 Power MOSFET (IXYS)

IXTP100N04T2 Power MOSFET (IXYS)

IXTP100N04T2 N-Channel MOSFET (INCHANGE)

IXTP100N15X4 Power MOSFET (IXYS)

TAGS

IXTP110N055T Power MOSFET IXYS Corporation

IXTP110N055T Distributor