* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/D
IXTP110N055T Datasheet (207.00 KB)
IXTP110N055T
IXYS Corporation
207.00 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
📁 Related Datasheet
IXTP110N055P PolarHT Power MOSFET (IXYS Corporation)
IXTP110N055P N-Channel MOSFET (INCHANGE)
IXTP110N055T N-Channel MOSFET (INCHANGE)
IXTP110N055T2 Power MOSFET (IXYS)
IXTP110N055T2 N-Channel MOSFET (INCHANGE)
IXTP110N12T2 N-Channel MOSFET (INCHANGE)
IXTP110N12T2 Power MOSFET (IXYS)
IXTP100N04T2 Power MOSFET (IXYS)
IXTP100N04T2 N-Channel MOSFET (INCHANGE)
IXTP100N15X4 Power MOSFET (IXYS)
